The structure of indium phosphide (001) treated with trimethylantimony in a metalorganic vapor-phase epitaxy reactor

Indium phosphide (001) surfaces were exposed to 0.61-mTorr trimethylantimony in a metalorganic vapor-phase epitaxy reactor. The antimony surface composition increased rapidly with dosage and saturated at 22.0at.% for temperatures between 450 and 600°C. The results indicate that a thin layer of InSb formed on the surface, ∼6.8A thick. Strain from the lattice mismatch caused faceting in the [110] direction, whereas the formation of Sb dimer bonds relieved the strain in the [−110] direction. As a result, narrow ridges formed that ranged from 4to10nm wide and from 3.0to18.0A high, depending on the antimony coverage.

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