3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias
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E. Beyne | B. Swinnen | L. Bogaerts | D. Tezcan | Z. Tokei | W. Ruythooren | J. Vaes | S. Stoukatch | P. de Moor | J. van Aelst | B. Eyckens | L. Carbonell | K. de Munck