High frequency simulation of resonant tunneling diodes
暂无分享,去创建一个
[1] J. P. Mattia,et al. Small‐signal admittance and switching measurements of the resonant‐tunneling diode , 1993 .
[2] Y. Zohta. On the Definition of Sequential Tunneling in a Double-Barrier Resonant Tunneling Structure , 1993 .
[3] A. Kriman,et al. Transient switching behavior of the resonant-tunneling diode , 1988, IEEE Electron Device Letters.
[4] T. C. McGill,et al. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .
[5] R. C. Potter,et al. Bias circuit effects on the current‐voltage characteristic of double‐barrier tunneling structures: Experimental and theoretical results , 1990 .
[6] E. R. BROWN,et al. Microwave and Miuimeter-wave Resonant-tunneling Devices , 2022 .
[7] K. Kurokawa,et al. Some basic characteristics of broadband negative resistance oscillator circuits , 1969 .
[8] N. Cronin,et al. Comparison of measured and computed conversion loss from a resonant tunneling device multiplier , 1992, IEEE Microwave and Guided Wave Letters.
[9] M. Henini,et al. Magnetic field and capacitance studies of intrinsic bistability in double-barrier structures , 1989 .
[10] M. Willander,et al. Response of a semiconductor tunneling structure to a time‐dependent perturbation , 1992 .
[11] K. Fobelets,et al. Capacitances in double-barrier tunneling structures , 1991 .
[12] High‐frequency properties of resonant tunneling devices , 1991 .
[13] Chen,et al. ac conductance of a double-barrier resonant tunneling system under a dc-bias voltage. , 1990, Physical review letters.
[14] William R. Frensley,et al. Boundary conditions for open quantum systems driven far from equilibrium , 1990 .
[15] Jensen,et al. Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures. , 1991, Physical review letters.
[16] S. Datta,et al. Importance of space-charge effects in resonant tunneling devices , 1987 .
[17] M. E. Hines,et al. High-frequency negative-resistance circuit principles for Esaki diode applications , 1960 .
[18] T. Sollner,et al. Resonant tunneling through quantum wells at frequencies up to 2.5 THz , 1983 .
[19] Scott C. Dudley,et al. AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio , 1987 .
[20] M. Hines,et al. High-frequency negative-resistance circuit principles for Esaki-diode applications , 1960 .
[21] T. C. L. G. Sollner,et al. Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodes , 1989 .
[22] Sakaki,et al. Tunneling escape rate of electrons from quantum well in double-barrier heterostructures. , 1987, Physical review letters.
[23] Roblin,et al. Three-dimensional scattering-assisted tunneling in resonant-tunneling diodes. , 1993, Physical review. B, Condensed matter.
[24] Darryl D. Coon,et al. Frequency limit of double barrier resonant tunneling oscillators , 1986 .
[25] L. Esaki,et al. Resonant tunneling in semiconductor double barriers , 1974 .
[26] Dudley,et al. Quantum inductance within linear response theory. , 1993, Physical review letters.
[27] George I. Haddad,et al. Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios , 1988 .
[28] Experimental study of the frequency limits of a resonant tunneling oscillator , 1986 .
[29] Mohamed Henini,et al. Impedance analysis of GaAs/Al(Ga)As resonant tunnel diodes in the NDR region , 1990 .
[30] William R. Frensley,et al. Quantum transport calculation of the small‐signal response of a resonant tunneling diode , 1987 .
[31] S. Stapleton,et al. Quantum capacitance of resonant tunneling diodes , 1991 .
[32] T. C. L. G. Sollner,et al. Microwave and Millimeter-Wave Resonant Tunneling Diodes , 1987, Topical Meeting on Picosecond Electronics and Optoelectronics.
[33] S. Luryi. Quantum capacitance devices , 1988 .
[34] D. Lippens,et al. Small-signal impedance of GaAs-Al/sub x/Ga/sub 1-x/As resonant tunnelling heterostructures at microwave frequency , 1988 .
[35] Hadis Morkoç,et al. A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequencies , 1987 .
[36] Kang L. Wang,et al. Observation of a large capacitive current in a double barrier resonant tunneling diode at resonance , 1994 .
[37] T. C. L. G. Sollner,et al. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes , 1989 .
[38] Hui Chun Liu,et al. Simulation of extrinsic bistability of resonant tunneling structures , 1988 .
[39] Timo J. Tolmunen,et al. Anomalous capacitance of quantum well double-barrier diodes , 1992 .