论文信息 - 25 Gbit/s selector module using 0.2 mu m GaAs MESFET technology

25 Gbit/s selector module using 0.2 mu m GaAs MESFET technology

A high-speed selector module has been developed. It is constructed from a selector IC mounted in a ceramic package, a power supply unit, phase shifters, and coaxial cables. The IC was designed using LSCFL and fabricated with 0.2 μm gate length GaAs MESFETs. The selector module operated above 25 Gbit/s. It is expected to be applied to high-speed IC measurements.

K. Murata | M. Togashi | M. Ohhata | S. Yamaguchi

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