论文信息 - Improvement of breakdown characteristics of a GaAs power field‐effect transistor using (NH4)2Sx treatment

Improvement of breakdown characteristics of a GaAs power field‐effect transistor using (NH4)2Sx treatment

A (NH4)2Sx solution treatment technique was applied to a GaAs metal‐semiconductor field‐effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH4)2Sx treatment was found to effectively suppress the formation of donor‐type defects at the GaAs surface and to increase the Schottky barrier height.

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