Characteristics of a 1200 V PT IGBT with trench gate and local life time control

A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT.

[1]  Shinsuke Mori,et al.  New process technologies improve IGBT module efficiency , 1995, IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting.

[2]  Gourab Majumdar,et al.  A new generation high speed low loss IGBT module , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[3]  Karsten P. Ulland,et al.  Vii. References , 2022 .

[4]  J. Yamashita,et al.  A study on the short circuit destruction of IGBTs , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[5]  T. Yamada,et al.  Next generation power module , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[6]  I. Takata,et al.  600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.