论文信息 - p-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

p-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas

We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used tosupply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being ∼3 atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from 1.0 × 10 1 5 to 1.0 × 10 1 8 cm - 3 and the mobility is approximately 10 - 1 cm 2 V - 1 s - 1 . The minimum film resistivity achieved is ∼20 Ω cm.

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