Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’

It is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin (thin‐film case). With increasing thickness of the diffusion zones the influence of interfacial reaction barriers decreases and the simultaneous existence of diffusion‐controlled growth of all equilibrium phases is expected (bulk case). Selective growth of the first and second phases and the effect of impurities are discussed with the influence of interfacial reaction barriers and with references to the known cases of silicide formation.

[1]  B. Tsaur,et al.  Ion‐beam induced metastable Pt2Si3 phase. I. Formation, structure, and properties , 1980 .

[2]  C. Canali,et al.  Phase diagrams and metal‐rich silicide formation , 1979 .

[3]  M. Hansen,et al.  Constitution of Binary Alloys , 1958 .

[4]  G. Gilmer,et al.  Diffusion mechanisms for the growth of Nb3Sn intermetallic layers , 1974 .

[5]  M. Nicolet,et al.  Influence of the nature of the Si substrate on nickel silicide formed from thin Ni films , 1976 .

[6]  G. Gilmer,et al.  Grain boundary diffusion and growth of intermetallic layers: Nb3Sn , 1974 .

[7]  C. Canali,et al.  On the formation of Ni and Pt silicide first phase: The dominant role of reaction kinetics , 1978 .

[8]  James W. Mayer,et al.  Effect of Oxidizing Ambients on Platinum Silicide Formation II . Auger and Backscattering Analyses , 1975 .

[9]  A. J. Hickl,et al.  Kinetics of phase layer growth during aluminide coating of nickel , 1974 .

[10]  C. Wagner,et al.  THE EVALUATION OF DATA OBTAINED WITH DIFFUSION COUPLES OF BINARY SINGLE- PHASE AND MULTIPHASE SYSTEMS. , 1969 .

[11]  A. S. Grove,et al.  General Relationship for the Thermal Oxidation of Silicon , 1965 .

[12]  G. V. Kidson,et al.  Some aspects of the growth of diffusion layers in binary systems , 1961 .

[13]  G. Ottaviani.  Review of binary alloy formation by thin film interactions , 1979 .

[14]  K. Tu,et al.  Interactions in the Co/Si thin‐film system. I. Kinetics , 1978 .

[15]  J. Poate,et al.  An analytical study of platinum silicide formation , 1976 .

[16]  A. Gershinskii,et al.  Investigation of reactive diffusion in the thin‐film system CuTi , 1975 .

[17]  J. Hirth,et al.  A theory of multiphase binary diffusion , 1976 .

[18]  Archibald L. Fripp,et al.  Thin Films—Interdiffusion and Reactions , 1979 .

[19]  Rodger M. Walser,et al.  First phase nucleation in silicon–transition‐metal planar interfaces , 1976 .

[20]  D. J. Coe,et al.  Silicide formation in Ni-Si Schottky barrier diodes , 1976 .

[21]  J. Poate,et al.  Kinetics and mechanism of platinum silicide formation on silicon , 1974 .

[22]  R. Balluffi,et al.  Special aspects of diffusion in thin films , 1975 .

[23]  C. Canali,et al.  Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively , 1979 .

[24]  E. Colgan,et al.  Phase formation in Cr‐Si thin‐film interactions , 1980 .

[25]  F. d'Heurle,et al.  The thin‐film formation of rhodium silicides , 1980 .

[26]  G. Ottaviani,et al.  Compound formation in metal—semiconductor interactions , 1978 .

[27]  W. Chu,et al.  Structure and growth kinetics of Ni2Si on silicon , 1975 .

[28]  B. Tsaur,et al.  Contact reaction between Si and rare earth metals , 1981 .

[29]  H. Schmalzried.  Solid State Reactions , 1997 .

[30]  P. Ho,et al.  Diffusion processes in thin films , 1980 .