论文信息 - Wide temperature range compact modeling of SiGe HBTs for space applications

Wide temperature range compact modeling of SiGe HBTs for space applications

We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43–393 K, and AC characteristics from 93–393 K.

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