Universal Compact Model for Thin-Film Transistors and Circuit Simulation for Low-Cost Flexible Large Area Electronics

Thin-film transistors (TFT) in hydrogenated amorphoussilicon, amorphousmetal oxide, andsmallmolecule and polymer organic semiconductors would all hold promise as potential device candidates to large area flexible electronics applications. A universal compact dc model was developed with a proper balance between the physical and mathematical approaches for these thin-film transistors (TFTs). It can capture the common key parameters used for device performance benchmarking of the different TFTs while being applicable to a wide range of TFT technologies in different materials and device structures. Based on this model, a user-friendly tool was developed to provide an interactive way for convenient parameter extraction. The model is continuous from the off-state and subthreshold regimes to the above-threshold regime, avoiding the convergence problems when being used in SPICE circuit simulations. Finally, for verification, it was implemented into a SPICE circuit simulator using Verilog-A to simulate a TFT circuit examplewith the simulated results agreeing verywell with the experimental measurements.

[1]  刘明,et al.  Analytical surface-potential compact model for amorphous-IGZO thin-film transistors , 2015 .

[2]  U-In Chung,et al.  Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors , 2011 .

[3]  Mallory Mativenga,et al.  High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs , 2015, IEEE Electron Device Letters.

[4]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[5]  U. Zschieschang,et al.  Organic Thin-Film Transistors: Part I—Compact DC Modeling , 2009, IEEE Transactions on Electron Devices.

[6]  V. A. Dravin,et al.  Transport phenomena in amorphous silicon doped by ion implantation of 3d metals , 1986 .

[7]  P. Stallinga,et al.  Electronic Transport in Organic Materials: Comparison of Band Theory with Percolation/(Variable Range) Hopping Theory , 2011, Advanced materials.

[8]  Matthew T. Cole,et al.  Flexible Electronics: The Next Ubiquitous Platform , 2012, Proceedings of the IEEE.

[9]  T. Someya,et al.  Stretchable, Large‐area Organic Electronics , 2010, Advanced materials.

[10]  Henning Sirringhaus,et al.  Simultaneous extraction of charge density dependent mobility and variable contact resistance from thin film transistors , 2014, 1402.5241.

[11]  Hideo Hosono,et al.  Material characteristics and applications of transparent amorphous oxide semiconductors , 2010 .

[12]  Zhenan Bao,et al.  Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT , 2015, Proceedings of the National Academy of Sciences.

[13]  Robert Graf,et al.  Ultrahigh mobility in polymer field-effect transistors by design. , 2011, Journal of the American Chemical Society.

[14]  Arokia Nathan,et al.  Unified Analytic Model for Current–Voltage Behavior in Amorphous Oxide Semiconductor TFTs , 2014, IEEE Electron Device Letters.

[15]  王伟,et al.  A New Surface Potential Based Physical Compact Model for GFET in RF Applications , 2015 .

[16]  A. Nathan,et al.  Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic , 2004, IEEE Journal of Solid-State Circuits.

[17]  Yunlong Guo,et al.  25th Anniversary Article: Recent Advances in n‐Type and Ambipolar Organic Field‐Effect Transistors , 2013, Advanced materials.

[18]  H. Sirringhaus.  25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon , 2014, Advanced materials.

[19]  Xiaojun Guo,et al.  Structure-Dependent Contact Barrier Effects in Bottom-Contact Organic Thin-Film Transistors , 2012, IEEE Transactions on Electron Devices.

[20]  Zhihua Chen,et al.  Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics , 2015, Nature Communications.

[21]  Simone Fratini,et al.  Tailoring the molecular structure to suppress extrinsic disorder in organic transistors. , 2014, Advanced materials.

[22]  Zhenan Bao,et al.  Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains. , 2013, Nature materials.

[23]  G.J. Coram,et al.  How to (and how not to) write a compact model in Verilog-A , 2004, Proceedings of the 2004 IEEE International Behavioral Modeling and Simulation Conference, 2004. BMAS 2004..

[24]  Robert A. Street,et al.  Electron drift mobility in amorphous Si: H , 1986 .

[25]  Hee Taek Yi,et al.  Ultra-flexible solution-processed organic field-effect transistors , 2012, Nature Communications.

[26]  Wei Jiang,et al.  High Mobility, Air Stable, Organic Single Crystal Transistors of an n‐Type Diperylene Bisimide , 2012, Advanced materials.

[27]  A. Salleo,et al.  Flexible Electronics: Materials and Applications , 2009 .

[28]  刘明,et al.  General Einstein relation model in disordered organic semiconductors under quasiequilibrium , 2015 .

[29]  Gregory N. Parsons,et al.  Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates , 2000 .

[30]  Klaus Müllen,et al.  Design strategies for organic semiconductors beyond the molecular formula. , 2012, Nature chemistry.

[31]  Alessandro Carpentiero,et al.  Contact resistance in organic thin film transistors , 2009 .

[32]  Thomas N Jackson,et al.  Mobility overestimation due to gated contacts in organic field-effect transistors , 2016, Nature Communications.

[33]  Henning Sirringhaus,et al.  Molecular origin of high field-effect mobility in an indacenodithiophene–benzothiadiazole copolymer , 2013, Nature Communications.

[34]  Gilles Horowitz,et al.  Compact DC Modeling of Organic Field-Effect Transistors: Review and Perspectives , 2014, IEEE Transactions on Electron Devices.

[35]  Henning Sirringhaus,et al.  Analysis of the contact resistance in staggered, top-gate organic field-effect transistors , 2007 .

[36]  Kenji Taniguchi,et al.  Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides , 1997 .

[37]  Gregory N. Parsons.  Surface reactions in very low temperature (<150°C) hydrogenated amorphous silicon deposition, and applications to thin film transistors , 2000 .

[38]  Louis Giraudet,et al.  Threshold voltage and turn-on voltage in organic transistors: Sensitivity to contact parasitics , 2011 .

[39]  E. Cantatore,et al.  Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors Part I: Long-Channel Devices , 2011, IEEE Transactions on Electron Devices.

[40]  Gui Yu,et al.  A stable solution-processed polymer semiconductor with record high-mobility for printed transistors , 2012, Scientific Reports.

[41]  Stephen R. Forrest,et al.  Electroluminescence from trap‐limited current transport in vacuum deposited organic light emitting devices , 1994 .

[42]  Trond Ytterdal,et al.  Modeling and Scaling of a-Si:H and Poly-Si Thin Film Transistors , 1997 .

[43]  Sanjiv Sambandan,et al.  Compact model for forward subthreshold characteristics in polymer semiconductor transistors , 2009 .

[44]  Zhenan Bao,et al.  Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method , 2014, Nature Communications.