INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN n- AND p-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION.

Carrier‐removal rates produced in n‐ and p‐type silicon by 1.7 MeV electron and reactor neutron irradiations were measured at 270°K on samples with resistivities between 0.1 and 50 Ω·cm. The measurements were performed under well‐defined conditions on test samples selected from float‐zone, quartz‐crucible, Dash, and Lopex silicon crystals, and from epitaxial silicon slices. Most of the carrier‐removal rates were determined from the initial 10% decrease in conductivity. Carrier‐removal rates also were determined in heavily irradiated samples of float‐zone and crucible‐grown silicon. The electron‐produced carrier‐removed rate is strongly crystal growth dependent in n‐type silicon, and the smallest removal rate is observed in quartz‐crucible‐grown material. The hole removal rate in p‐type silicon under electron irradiation exhibits only weak crystal‐growth dependence which becomes more pronounced during subsequent isochronal annealing. After 370°K annealing of both n‐ and p‐type 10 Ω·cm materials, the smalle...

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