A 300 V, 200 A normally-off-type SIT (static induction transistor) module has been fabricated. The module consists of two 100 A planar-gate SIT chips which show a current gain of 325 and voltage gain of 0.23 V at I/sub D/=100 A. The design, fabrication and electrical characteristics are discussed. Improved trade off between the current gain and breakdown voltage has been obtained by improving the design of the guard ring and the field rings. Double-laser metallization increased the effective area on the chip surface. The device has been developed to raise the operational frequency of the DC chopper to 15 kHz and eliminate the acoustic noise generated by the equipment. In this application, efficiency of 98% has been obtained.<<ETX>>
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