Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics
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H. Mattausch | H. Masuda | S. Amakawa | T. Kanamoto | M. Miura-Mattausch | H. Kikuchihara | M. Miyake | T. Hayashi | A. Tanaka | Takashi Saito