论文信息 - Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

W. Chow | S. Koch | Mauro F. Pereira

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