Boundary conditions in regional Monte Carlo device analysis
暂无分享,去创建一个
A new set of boundary conditions is proposed which allows Monte Carlo (MC) calculations to be carried out accurately in preselected regions of a device structure, thus avoiding impractically long computation time. This technique has been applied to three different silicon device structures: an n-p junction, a 0.3-µm basewidth n+-n-n+diode, and an n+-p-n-n+bipolar-transistor structure with a 0.1-µm basewidth. The results indicate difficulties with the MC method when applied to regions where a large retarding field exists. A comparison of the results where both the entire device structure can be analyzed and the "regional" MC calculation can be performed, using the proposed boundary conditions, shows good agreement. The computation time using the regional approach, however, is substantially less.
[1] C. Jacoboni,et al. Electron drift velocity in silicon , 1975 .
[2] Y. Park,et al. On the Monte Carlo simulation of bipolar device , 1982, 1982 International Electron Devices Meeting.
[3] A. M. Mazzone,et al. Monte Carlo simulation of current transport in forward-biased Schottky-barrier diodes , 1976 .
[4] Y. Awano,et al. Monte Carlo simulation of submicron GaAs n + -i(n)-n + diode , 1982 .