Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner
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Kah-Wee Ang | King-Jien Chui | Yee-Chia Yeo | N. Balasubramanian | Ming-Fu Li | Chih-Hang Tung | G.S. Samudra
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