A comprehensive varactor study for advanced CMOS RFIC design

The key performance index related to RF circuit design for a portfolio of varactor structures, N+/Nwell MOS varactor (N+/NW MOSVAR). P+/Pwell MOSVAR (P+/PW MOSVAR) and junction varactor (JVAC) were studied using advanced 0.18/spl mu/m to 90nm RF-CMOS technologies. The engineering and trade-offs for quality factor (Q-factor), tuning ratio (TR = C/sub max/ / C/sub min/), capacitance mismatch and flicker noise for different device structure, geometry size, operation and process conditions were compared to provide a comprehensive guideline for selecting varactor structures and dimensions during advanced RFIC design.