A 600V super low loss IGBT with advanced micro-P structure for the next generation IPM

This paper describes a new 600V trench-gate field stop IGBT (FS-IGBT) with an advanced micro p-base (micro-P) structure in order to realize low on-state voltage drop and low Miller capacitance for the next generation 600V intelligent power module (IPM). The extra margin of the safe operating area (SOA) can be reduced by using improved over-current protection function in the IPMs, and collector-emitter saturation voltage is reduced more by the optimization of the SOA. The new 600V IGBT improved trade-off relationship between on-state voltage drop and turn-off power dissipation. The device also realizes low turn-on power dissipation without increasing radiation noise. As a result, total power dissipation of the new IGBT can be reduced by 14.2% compared to that of the conventional IGBT.

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