1/ f noise in p‐n junction diodes

A survey is given of the recent literature on 1/ f noise in p‐n junction diodes. Two models for the explanation of 1/ f noise are discussed: Hooge’s model assuming mobility fluctuations and McWhorter’s model assuming number fluctuations. Relations for the magnitude of the 1/ f noise based on Hooge’s model are presented for several types of diodes: diffusion current dominated diodes, GR current dominated diodes, long and short diodes, and illuminated photodiodes. These relations are compared with experimental results obtained from diodes made of Si, GaP, and (HgCd)Te. The agreement between experiment and calculated relations is often found to be satisfactory, both for forward and reverse‐biased diodes and for illuminated diodes. 1/ f noise relations based on McWhorter’s model are scarce, moreover, they do not sufficiently describe the 1/ f noise in diodes.