论文信息 - Performance analysis of a Bipolar Mode JFET (BMFET) with normally off characteristics

Performance analysis of a Bipolar Mode JFET (BMFET) with normally off characteristics

The fabrication and the characterization of a family of power Bipolar Mode JFET's (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm2) have been obtained. Results allow to get an insight in the physics of operation of the BMFET, to define their theoretical limits of operation, and to understand the reasons for the superior performance of the present device, with respect to the Bipolar Transistor.

[1] S. Bellone,et al. On state modeling of power JFET structures in the bipolar mode , 1985 .

[2] Paolo Spirito,et al. A quasi-one-dimensional analysis of vertical JFET devices operated in the bipolar mode , 1983 .

[3] P. Spirito,et al. High-voltage bipolar mode JFET with normally off characteristics , 1985, IEEE Electron Device Letters.

[4] P. L. Hower. Optimum design of power transistor switches , 1973 .

[5] B. Jayant Baliga. Bipolar operation of power junction field effect transistors , 1980 .

[6] A. Goodman,et al. The COMFET—A new high conductance MOS-gated device , 1983, IEEE Electron Device Letters.

[7] J. Nishizawa,et al. Experimental study on current gain of BSIT , 1986, IEEE Transactions on Electron Devices.

[8] M.S. Adler,et al. The evolution of power device technology , 1984, IEEE Transactions on Electron Devices.

[9] M.S. Adler,et al. A comparison between BIMOS device types , 1986, IEEE Transactions on Electron Devices.

[10] T. Ohmi,et al. Punching through device and its integration—Static induction transistor , 1980, IEEE Transactions on Electron Devices.