Sb and Bi on GaAs(110): Substrate-stabilized overlayer structures studied with scanning tunneling microscopy.

The growth structures for Sb and Bi films on GaAs(110) have been studied for thicknesses of 0.5-50 monolayers (ML) with annealing to temperatures as high as 600 K. Antimony films exhibit layered structures with ∼6-A heights but also disordered surface features for coverages up to ∼10 ML when grown at 300 K. Annealing to 500 K produces orientationally ordered films that contain grains with striped domain walls and two differently oriented superstructures