Irradiation-Induced Deep Levels in Silicon for Power Device Tailoring

This paper gives an overview of the physics and electrical characteristics of irradiation-induced defects in silicon created by electrons, protons, and helium ions. The parameters of the traps usable as recombination centers or causing doping and discharging effects are described quantitatively, including temperature dependence and injection level dependence. The influence of recombination centers on the electric characteristics of power devices is discussed, especially with respect to applications for medium-voltage and high-voltage power devices.

[1]  P. Hazdra,et al.  Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement , 1999 .

[2]  S. Jain,et al.  Effect of emitter recombinations on the open circuit voltage decay of a junction diode , 1981 .

[3]  Teimuraz Mchedlidze,et al.  EPR Study of Hydrogen‐Related Radiation‐Induced Shallow Donors in Silicon , 1998 .

[4]  An accurate method for determining intrinsic optical absorption in indirect band gap semiconductors , 1998 .

[5]  R. G. Mazur,et al.  A Spreading Resistance Technique for Resistivity Measurements on Silicon , 1966 .

[6]  T. Pavelka,et al.  Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon , 1988 .

[7]  R. Pritchard,et al.  SHALLOW THERMAL DONORS IN SILICON : THE ROLES OF AL, H, N, AND POINT DEFECTS , 1998 .

[9]  R. Siemieniec,et al.  Analysis of dynamic impatt oscillations caused by radiation induced deep centres with local and homogenous vertical distribution , 2004, ISPSD 2004.

[10]  V. Markevich,et al.  Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si , 2001 .

[11]  J. Lutz,et al.  IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels , 1998 .

[12]  Weber,et al.  Shallow hydrogen-related donors in silicon. , 1993, Physical review. B, Condensed matter.

[13]  K. Gill,et al.  Bulk damage effects in irradiated silicon detectors due to clustered divacancies , 1997 .

[14]  M. Willander,et al.  Generation of divacancies in silicon irradiated by 2‐MeV electrons: Depth and dose dependence , 1987 .

[15]  P. Mooney,et al.  Carbon interstitial in electron-irradiated silicon☆ , 1977 .

[16]  Josef Lutz,et al.  Determination of parameters of radiation induced traps in silicon , 2002 .

[17]  E. P. Neustroev,et al.  Thermal acceptors in irradiated silicon , 2000 .

[18]  D. Lang.  Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[19]  P. Banbury,et al.  A bistable defect in electron-irradiated boron-doped silicon , 1985 .

[20]  C. A. Londos,et al.  Defect states in electron-bombarded n-type silicon , 1989 .

[21]  C. A. Londos,et al.  Defect studies in electron-irradiated boron-doped silicon , 1987 .

[22]  Lionel C. Kimerling,et al.  On the role of defect charge state in the stability of point defects in silicon , 1975 .

[23]  Pavel Hazdra,et al.  Accurate simulation of fast ion irradiated power devices , 1994 .

[24]  J. Guldberg,et al.  Electron trap annealing in neutron transmutation doped silicon , 1977 .

[25]  L. J. Giacoletto,et al.  Measurement of Minority Carrier Lifetime and Surface Effects in Junction Devices , 1955, Proceedings of the IRE.

[26]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[27]  R. Kassing,et al.  The influence of recombination center data on the I‐V characteristics of silicon p+‐i‐n+ diodes , 1977 .

[28]  A. Hallén,et al.  Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si , 2002 .

[29]  Ferenc Masszi,et al.  Lifetime in proton irradiated silicon , 1996 .

[30]  G. Wertheim,et al.  Transient Recombination of Excess Carriers in Semiconductors , 1958 .

[31]  S. D. Brotherton,et al.  Defect production and lifetime control in electron and γ‐irradiated silicon , 1982 .

[32]  C. Hogarth,et al.  Determination of the bulk carrier lifetime in the low-doped region of a silicon power diode, by the method of open circuit voltage decay† , 1973 .

[33]  Martin A. Green,et al.  Minority carrier lifetimes using compensated differental open circuit voltage decay , 1983 .

[34]  B. Santo,et al.  Solid State , 2012 .

[35]  Jan Vobecky,et al.  Optimization of power diode characteristics by means of ion irradiation , 1996 .

[36]  J. R. Troxell.  Ion-implantation associated defect production in silicon , 1983 .