핵폭발 환경에서의 PIN다이오드 소자의 광전류특성연구

Electronic systems may be cause of various serious failures due to an ionizing radiation effect when exposed to a prompt gamma-ray pulse. This transient electrical malfunction can, in some cases, results in a failure of the electronic system of which the circuits are a part. Transient radiation measurement and evaluation system is required to development for enhanced radiation-resistance against the initial nuclear radiation produced by the detonation of a nuclear weapon of semiconductor devices. In these studies, we performed the following work. In the first part of the work, we carried out a SPICE simulation applied to nuclear radiation condition for PIN diode and we also investigated the photocurrent by a pulsed gamma-ray on a PIN diode using a TCAD simulation.