Bulk Heterojunction Photovoltaic Cells with Low Donor Concentration

High-effi ciency organic photovoltaic (OPV) cells are mostly based on a bulk heterojunction [ 1 ] (BHJ) structure, which is essentially a thin fi lm of mixed electron donor and acceptor. With few exceptions, the acceptor component is a fullerene-based material such as C 60 [ 2 ] and PCBM, [ 3 ] whereas a large variety of materials has been found to be useful as the donor component. [ 4 ] In order to achieve high power conversion effi ciency, the donor–acceptor composition of the BHJ needs to be optimized with respect to light absorption and charge generation, including for instance the use of a low bandgap donor, [ 5 ] to complement the absorption of the acceptor and selecting a donor with proper highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels to match that of the acceptor. In this work, we show that it is possible to achieve a large open-circuit voltage ( V oc > 1.0 V) in a fullerene-based OPV with almost any donor, provided that the donor is present in a small concentration and that MoO x is used as the Schottky barrier contact [ 6 ] to the BHJ. With fi ne tuning of the donor concentration to overcome the hole-transport limitation in the BHJ, high power conversion effi ciency ( η PCE > 5%) has been realized. In Figure 1 the schematic of the OPV cell layer sequence, indium tin oxide (ITO)/MoO x /BHJ/bathophenanthroline (Bphen)/Al, is shown along with the molecular structures of 1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC), Bphen, C 60 , and C 70 . In this sequence, the BHJ layer is a mixed fi lm of TAPC [ 7 ] (donor) and C 60 (acceptor) with various ratios. The concentration of TAPC is indicated in volume fraction. As the major focus of this study was concerned with the composition of the BHJ layer, we kept the thickness and composition of all the other layers constant: ITO (90 nm), MoO x (2 nm), Bphen (8 nm), and Al (100 nm). First, we studied the effect of varying the TAPC concentration in the BHJ layer with a constant thickness of 40 nm. In Figure 2 a the current density–voltage ( J – V ) characteristics are

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