Polariton scattering processes under resonant excitation in a strongly coupled semiconductor microcavity

A study of the cavity polariton scattering processes in a InGaAs/GaAs system under increasing resonant excitation is made at both positive and negative detunings. Collisional broadening is experimentally investigated by resonantly pumping both polariton branches, the observed behaviour is shown to be similar to that of the bare quantum well excitons. However, it is shown that in contrast to this when resonantly exciting just the lower polariton branch the collisional broadening is comparatively suppressed. These results are explained by comparing the modified dispersion curve of the polariton to that of the quantum well exciton. Finally, an increase in coherence, the inverse of collisional broadening, of the lower polariton branch is seen with an increase in excitation under certain experimental conditions. We suggest that this result provides evidence for a condensate in the polariton system. No similar effect occurs in the bare quantum well excitons.

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