Submilliampere threshold 1.5 /spl mu/m strained-layer multiple quantum well lasers
暂无分享,去创建一个
R. Bhat | C. Zah | S. Menocal | F. Favire | D. Hwang | R. Bhat | T. Lee | N. Andreadakis | T.P. Lee | M. Koza | N.C. Andreadakis | C.E. Zah | M. Koza | F.J. Favire | S.G. Menocal | D.M. Hwang
[1] Kam Y. Lau,et al. Ultralow‐threshold graded‐index separate‐confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings , 1987 .
[2] P.J.A. Thijs,et al. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 mu m , 1989 .
[3] Kam Y. Lau,et al. High‐speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum well lasers without bias , 1987 .
[4] Eli Yablonovitch,et al. Band structure engineering of semiconductor lasers for optical communications , 1988 .
[5] A. R. Adams,et al. Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .