Analytical device model for submicrometer MOSFET's

A drain current model applicable to deep submicrometer MOSFETs is proposed. This pseudo-two-dimensional device model includes the velocity overshoot effect by using the extended-drift-diffusion (EDD) model. Calculated current-voltage characteristics agree well with the reported experimental data for deep submicrometer MOSFETs. The model is applicable to small-geometry MOSFETs down to L=0.1 mu m, whereas conventional modes without the velocity overshoot are valid to 0.25 mu m. >

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