HIGH PRESSURE - HIGH TEMPERATURE TREATMENT TO CREATE OXYGEN NANO-CLUSTERS AND DEFECTS IN SINGLE CRYSTALLINE SILICON

Effect of enhanced hydrostatic pressure (HP) on oxygen clustering in as-grown Czochralski silicon (Cz-Si) treated at up to 1000K - 1.6 GPa as well as on creation of defects in Cz-Si with SiO x precipitates, HP treated at 295K - 2 GPa and at 1580K - 1 GPa, has been investigated by infrared spectroscopy, electrical, photoluminescence and related structure - sensitive methods. Treatment of Cz-Si at 720-1000K resulted in enhanced generation of oxygen - containing nano-clusters exhibiting thermal donor activity while the HP treatment at 295K and 1580K - in creation of some additional defects (non- radiative recombination centres). Above effects are related to HP - induced creation of nucleation centres for oxygen clustering in initially "defect free" Cz-Si at 720-1000K and to generation of nano-defects at the SiO x /Si boundary in Cz-Si containing oxygen precipitates.