Two-dimensional Monte Carlo simulation of a submicron GaAs MESFET with a nonuniformly doped channel

Abstract A two-dimensional-ensemble Monte Carlo program coupled with a program for solving Poisson's equation is used to perform a self-consistent simulation of a GaAs MESFET having a nonuniformly doped (ion-implanted) channel. For V gs = −0.5 V and V ds = 1 V, the simulation yields I ds = 18 mA/50 μ m, g m = 755 mS/mm and f T = 230 GHz. The results are compared to those obtained from a conventional 2D device-analysis program which uses static velocity-field characteristics and an empirical expression for low-field mobility versus doping concentration. The currents, transconductance, and cutoff frequency obtained from the Monte Carlo simulation are considerably larger than those obtained from the conventional 2D analysis. This difference is explained by the fact that the conventional device analysis program fails to account for transient transport phenomena.

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