Experimental investigation of 650V superjunction IGBTs

650V superjunction IGBTs have been fabricated. Depending on IGBT structures as well as process conditions, competitive trade-off performances have been observed. Vcesat of 1.4V and tf around 35 ns at the collector current density of 250A/cm2 were obtained with the prototype of superjunction FS IGBT. The superjunction NPT IGBT also shows tf of 35ns with Vcesat of 1.9V, which is superior to the conventional trench FS IGBT. Integrating the superjunction technology into IGBT, we demonstrated that the superjunction IGBT is a viable IGBT technology option as a next generation IGBT technology.

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