论文信息 - Transport measurement across single and coupled dopants implanted in a CMOS channel

Transport measurement across single and coupled dopants implanted in a CMOS channel

We access properties of single dopants embedded in ultra-scaled MOSFET. In such nanostructures, the ionization energy of a single dopant is enhanced. We establish a new method to determine the energy spectrum of a single dopant by connecting two dopants in series and using one dopant as an energy probe for the second one. Gigahertz microwave driving of this double donor system reveals coherent charge transfert in this ultimate “atomic” transistor.

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