Phonons, electron-phonon interactions, and phonon-phonon interactions in III-V nitrides

Fundamental properties of phonons in III-V nitrides are examined with a view toward understanding processes important in the operation of III-V nitride devices. Firstly, confined, interface and propagating modes in wurtzite quantum wells are described in terms of Loudon's model for uniaxial semiconductors and the dielectric continuum model. Basic properties of the phonon modes and carrier-phonon interactions are considered in the basis of this treatment of dimensionally-confined phonons in wurtzite structures. A key feature of these phonon modes is their enhanced dispersion and its origin from the non-isotropic nature of the wurtzites. As will be discussed, this dispersion has important consequences for phonon propagation and phonon energy spectra. Secondly, the second-order phonon decay process of combined point defect scattering and anharmonic decay is examined as a means of estimating line broadening associated with the decay of phonons in III-V nitrides of wurtzite structure containing point defects. Thirdly, an analysis of Raman linewidths measured for AlN and GaN wurtzites is made to estimate phonon lifetimes.

[1]  M. Stroscio,et al.  Optical-phonon confinement and scattering in wurtzite heterostructures , 1998 .

[2]  Youngman,et al.  Photoinduced thermal-conductivity changes in aluminum nitride. , 1993, Physical review. B, Condensed matter.

[3]  J. Birman,et al.  Lattice Dynamics of Wurtzite: CdS , 1967 .

[4]  Jose Menendez,et al.  Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects , 1984 .

[5]  Michael S. Shur,et al.  Comparison of high field electron transport in GaN and GaAs , 1997 .

[6]  B. Ridley,et al.  The LO phonon lifetime in GaN , 1996 .

[7]  A. Debernardi.  PHONON LINEWIDTH IN III-V SEMICONDUCTORS FROM DENSITY-FUNCTIONAL PERTURBATION THEORY , 1998 .

[8]  Fukumoto,et al.  First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride. , 1993, Physical review. B, Condensed matter.

[9]  Mitra Dutta,et al.  Long-wavelength optical phonons in ternary nitride-based crystals , 1998 .

[10]  Shigeru Nakagawa,et al.  Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect , 1998 .

[11]  M. Stroscio,et al.  RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES , 1998 .

[12]  Manijeh Razeghi,et al.  High-quality LEO growth and characterization of GaN films on Al2O3 and Si substrates , 1999, Other Conferences.

[13]  P. Klemens.  Thermal Conductivity and Lattice Vibrational Modes , 1958 .

[14]  P. Vogl,et al.  Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors , 1998 .

[15]  I. F. Chang,et al.  Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed Crystals , 1968 .

[16]  S. M. Komirenko,et al.  Confined phonons and phonon-mode properties of III–V nitrides with wurtzite crystal structure , 1999 .

[17]  Gupta,et al.  Nonelectronic scattering of longitudinal-optical phonons in bulk polar semiconductors. , 1991, Physical review. B, Condensed matter.

[18]  S. Shapiro,et al.  Raman Scattering from Polar Phonons , 1972 .

[19]  Vincenzo Fiorentini,et al.  MACROSCOPIC POLARIZATION AND BAND OFFSETS AT NITRIDE HETEROJUNCTIONS , 1998 .

[20]  S. M. Komirenko,et al.  Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells , 2000 .

[21]  P. Klemens,et al.  Thermal resistivity of die ectric crystals due to four-phonon processes and optical modes , 1977 .