论文信息 - The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates - 字舞流文

The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates

S. Kukushkin | I. Soshnikov | A. Redkov | S. Sharofidinov | A. S. Grashchenko | A. Osipov | V. Kidalov | A. F. Dydenchuk