Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon

It was found that fatigue in photoluminescence of hydrogenated amorphous silicon could be photo-annealed with infrared light. This photo-annealing effect supports the three state model of the fatigue which consists of initial, intermediate and final fatigued state. Different fatigue behavior at two different temperatures (77 K and 294 K) is also interpreted by the model.