论文信息 - Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

A first-principles approach to inversion layer quantization, valid for arbitrarily complex band structures, has been developed. This has allowed, for the first time, hole quantization and its effects on p-MOSFET device characteristics to be studied. In addition, electron quantization effects are revisited, improving on previous, simpler approaches. In particular, the impact of quantization on the threshold voltages and "effective" gate oxide thicknesses of p- and n-MOSFETs is investigated. A simple compact model is provided to quantitatively describe the threshold voltage shifts at 300 K as a function of the doping concentration and the oxide thickness. The significance of hole quantization for buried channel p-MOS structures is also studied. The results can be used to both identify and model these effects using popular device simulators.

[1] C. Moglestue,et al. Self‐consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfaces , 1986 .

[2] F. Stern,et al. Electronic properties of two-dimensional systems , 1982 .

[3] H. Lifka,et al. Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs , 1992 .

[4] H. C. de Graaff,et al. Measurements of bandgap narrowing in Si bipolar transistors , 1976 .

[5] J.D. Bude,et al. Gate capacitance attenuation in MOS devices with thin gate dielectrics , 1996, IEEE Electron Device Letters.

[6] K. Sadra,et al. Quantization effects in inversion layers of PMOSFETs on Si (100) substrates , 1996, IEEE Electron Device Letters.

[7] Yasuyuki Ohkura,et al. Quantum effects in Si n-MOS inversion layer at high substrate concentration , 1990 .

[8] G. Baccarani,et al. Generalized scaling theory and its application to a ¼ micrometer MOSFET design , 1984, IEEE Transactions on Electron Devices.

[9] F. Stern. Self-Consistent Results for n -Type Si Inversion Layers , 1972 .

[10] A. Tasch,et al. A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs , 1996 .