论文信息 - Terahertz rectification by graphene field effect transistors

Terahertz rectification by graphene field effect transistors

We demonstrate two different Terahertz (THz) rectification mechanisms by graphene field effect transistors: 1) a standard rectification mechanism where THz radiation modulates simultaneously the carrier density and the carrier velocity, and 2) a mesoscopic rectification due to the existence of the nonlinearity associated to the quantum interference effects.

[1] W. Knap,et al. Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects , 2011 .

[2] H. Bouchiat,et al. Conductance fluctuations and field asymmetry of rectification in graphene. , 2009, Physical review letters.

[3] Mikhail I. Dyakonov,et al. Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications , 2009, 0907.2523.

[4] V. Ryzhii,et al. Graphene bilayer field-effect phototransistor for terahertz and infrared detection , 2009, 0901.3409.

[5] K. Efetov,et al. Universal conductance fluctuations in graphene , 2008 .

[6] M. Shur,et al. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid , 1996 .

[7] Howard,et al. Second-harmonic generation in submicrometer GaAs-AlxGa , 1988, Physical review. B, Condensed matter.