Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transconductance $$(\hbox {g}_{\mathrm{m}})$$(gm), cut-off frequency $$(f_{\mathrm{T}})$$(fT), maximum oscillator frequency $$(f_{\mathrm{MAX}})$$(fMAX), power gains (Gma, G$${_\mathrm{MT}}$$MT) parasitic capacitances, stern’s stability factor and intrinsic delay. Further, using three-dimensional device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in $$f_{\mathrm{T}}$$fT and $$f_{\mathrm{MAX}}$$fMAX; and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects, improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device’s RF performance at such aggressively scaled dimensions.

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