Three-dimensional masterslice MMIC on Si substrate

This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.

[1]  Ichihiko Toyoda,et al.  Three-dimensional MMIC and its application: an ultra-wideband miniature balun , 1995 .

[2]  I. Toyoda,et al.  Three-dimensional passive circuit technology for ultra-compact MMICs , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[3]  Ichihiko Toyoda,et al.  Highly integrated three-dimensional MMIC single-chip receiver and transmitter , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.