Investigation of n‐ and p‐type doping of GaN during epitaxial growth in a mass production scale multiwafer‐rotating‐disk reactor
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S. Pearton | Yicheng Lu | R. Kolbas | A. Thompson | M. Schurman | A. Gurary | R. Stall | T. Salagaj | C. Yuan | W. Kroll | C. Hwang | W. Mayo | S. Krishnankutty | Y. Li | I. Shmagin