Novel mechanisms in nm-thick gate SiO 2 growth at low temperatures utilizing activated oxygen

We propose a novel technique of direct oxidation of Si surfaces using activated oxygen species which can react with Si surfaces to form SiO 2 at low temperatures ( < 500 °C). Specific oxidation mechanisms have been revealed, and the atomic level planarization at surfaces and interfaces could be achieved for the first time. Electronic properties of grown films and SiO 2 /Si interfaces were characterized in detail to show the feasibility for the application to MOSFET devices.