Double-Sided, Double-Type-Column 3-D Detectors: Design, Fabrication, and Technology Evaluation

We report on the latest results from the development of 3-D silicon radiation detectors at Fondazione Bruno Kessler of Trento (FBK), Italy (formerly ITC-IRST). Building on the results obtained from previous devices (3-D Single-Type-Column), a new detector concept has been defined, namely 3-D-DDTC (Double-sided Double-Type Column), which involves columnar electrodes of both doping types, etched from alternate wafer sides, stopping a short distance (d) from the opposite surface. Simulations prove that, if d is kept small with respect to the wafer thickness, this approach can yield charge collection properties comparable to those of standard 3-D detectors, with the advantage of a simpler fabrication process. Two wafer layouts have been designed with reference to this technology, and two fabrication runs have been performed. Technological and design aspects are reported in this paper, along with simulation results and initial results from the characterization of detectors and test structures belonging to the first 3-D-DDTC batch.

[1]  Keith Mathieson,et al.  Technology development of 3D detectors for high-energy physics and imaging , 2002 .

[2]  C. Da Via,et al.  Radiation hardness properties of full-3D active edge silicon sensors , 2008 .

[3]  Maurizio Boscardin,et al.  Study of the signal formation in single-type column 3D silicon detectors , 2007 .

[4]  Sherwood Parker,et al.  Silicon detectors with 3-D electrode arrays: fabrication and initial test results , 1999 .

[5]  Maurizio Boscardin,et al.  Signal and charge collection efficiency of a p-type STC 3D-detector irradiated to sLHC-fluences, read out with 40 MHz , 2007 .

[6]  R. Bates,et al.  Simulation Results From Double-Sided 3-D Detectors , 2006, IEEE Transactions on Nuclear Science.

[7]  Maurizio Boscardin,et al.  Development of 3D detectors featuring columnar electrodes of the same doping type , 2005 .

[8]  C. Gössling,et al.  Gate-controlled diodes for characterization of the Si–SiO2 interface with respect to surface effects of silicon detectors , 2000 .

[9]  Helmuth Spieler,et al.  Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker , 2005 .

[10]  C. Piemonte,et al.  Device simulations of isolation techniques for silicon microstrip detectors made on p-type substrates , 2006, IEEE Transactions on Nuclear Science.

[11]  P. Allport,et al.  Response to minimum ionising particles of p-type substrate silicon microstrip detectors irradiated with neutrons to LHC upgrade doses , 2007 .

[12]  S. Stapnes,et al.  Physics potential and experimental challenges of the LHC luminosity upgrade , 2002, hep-ph/0204087.

[13]  Maurizio Boscardin,et al.  First electrical characterization of 3D detectors with electrodes of the same doping type , 2007 .

[14]  Maurizio Boscardin,et al.  Fabrication of 3D detectors with columnar electrodes of the same doping type , 2007 .

[15]  C. Kenney,et al.  3D — A proposed new architecture for solid-state radiation detectors , 1997 .

[16]  C. Da Via,et al.  3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance , 2009 .

[17]  K. Jakobs,et al.  Short Strips for the sLHC: A P-Type Silicon Microstrip Detector in 3-D Technology , 2008, IEEE Transactions on Nuclear Science.

[18]  Marina Artuso,et al.  Radiation-hard semiconductor detectors for SuperLHC , 2005 .

[19]  C. Kenney,et al.  Test Beam Characterization of 3-D Silicon Pixel Detectors , 2008, IEEE Transactions on Nuclear Science.

[20]  Maurizio Boscardin,et al.  Laser characterisation of a 3D single-type column p-type prototype module read out with ATLAS SCT electronics , 2007 .

[21]  G. Pellegrini,et al.  Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons , 2006, 2006 IEEE Nuclear Science Symposium Conference Record.

[22]  U. Parzefall,et al.  Short strips for the SLHC: A P-Type Silicon microstrip detector in 3D-technology , 2007, 2007 IEEE Nuclear Science Symposium Conference Record.

[23]  C. Piemonte,et al.  Charge collection measurements in single-type column 3D sensors , 2007 .

[24]  S. Parker,et al.  Results from 3-D silicon sensors with wall electrodes: near-cell-edge sensitivity measurements as a preview of active-edge sensors , 2001 .

[25]  Celeste Fleta,et al.  First double-sided 3-D detectors fabricated at CNM-IMB , 2008 .