Noise Characteristics of 0.5 μm/50 GHz Si and 0.5 μm/70 GHz SiGe Bipolar Technologies

This paper presents the noise characteristics of 0.5 μm / 50 GHz Si [8] and 0.5 μm / 70 GHz SiGe [5] bipolar transistors. High-frequency (HF) noise characteristics are shown and compared. Observed similarities and differences are discussed. Low-frequency (LF) noise characteristics are used to extract LF noise model parameters. The corresponding noise sources are included in SpectreRF and the model is applied to simulate oscillator noise characteristics. Comparisons with experimental results are shown which demonstrate the usefulness of the approach for optimization of phase noise.

[1]  N. Morris,et al.  QUBiC3: a 0.5 /spl mu/m BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

[2]  E. Ohue,et al.  12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology , 1997 .

[3]  Yoshihiro Hayashi,et al.  7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz , 1997 .

[4]  K. Aufinger,et al.  A Straightforward Noise De-Embedding Method and its Application to High-Speed Silicon Bipolar Transistors , 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

[5]  Arpad L. Scholtz,et al.  22 GHz monolithically integrated oscillator in silicon bipolar technology , 1999 .

[6]  M. J. Deen,et al.  Microwave noise characterisation of poly-emitter bipolar junction transistors , 1993 .

[7]  Sorin P. Voinigescu,et al.  A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design , 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

[8]  K. Aufinger,et al.  A 50 GHz implanted base silicon bipolar technology with 35 GHz static frequency divider , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

[9]  J. Bock,et al.  Noise characteristics of transistors fabricated in an advanced silicon bipolar technology , 1996 .

[10]  K. Aufinger,et al.  SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay , 1995, Proceedings of International Electron Devices Meeting.

[11]  A. Schuppen,et al.  SiGe - Key technology for economic solutions in high frequency , 1998 .

[12]  H. Schumacher,et al.  Low-noise performance of SiGe heterojunction bipolar transistors , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[13]  A. Ziel.  Noise in solid state devices and circuits , 1986 .

[14]  S. Jeng,et al.  A SiGe HBT BiCMOS technology for mixed signal RF applications , 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

[15]  K. Washio,et al.  SA 19.6: 95GHz fT Self-Aligned Selective Epitaxial SiGe HBT with SNll Electrodes , 1998 .

[16]  A. van der Ziel,et al.  Accurate expression for the noise temperature of common emitter microwave transistors , 1984, IEEE Transactions on Electron Devices.