论文信息 - Growth and dissolution kinetics of III‐V heterostructures formed by LPE. II. Comparison between thermodynamic and kinetic models

Growth and dissolution kinetics of III‐V heterostructures formed by LPE. II. Comparison between thermodynamic and kinetic models

In a previous paper, we presented both thermodynamic and kinetic models to describe the nonequilibrium state which occurs naturally when growing heterostructures in the Ga1−xAlxAs system by LPE. In this paper we both develop these two models and show them to be mutually compatible as applied to both the GaAs1−xPx and the Ga1−xAlxAs systems.

M. Small | R. Ghez

[1] M. Small,et al. The formation of Ga1−xAlxAs layers on the surface of GaAs during continual dissolution into Ga‐Al‐As solutions , 1979 .

[2] M. Small,et al. Growth and dissolution kinetics of III‐V heterostructures formed by LPE , 1979 .

[3] V. Gottschalch,et al. Liquid phase epitaxial deposition of GaP on GaAs , 1978 .

[4] H. Casey. Heterostructure lasers , 1978 .

[5] Yoshio Noguchi,et al. Crack formation in InP‐GaxIn1−xAs‐InP double‐heterostructure fabrication , 1976 .

[6] R. Moon,et al. Liquid phase epitaxial growth of InGaAs on InP , 1976 .

[7] M. Panish,et al. Phase equilibria in ternary III–V systems , 1972 .

[8] K. Shih. Epitaxial Growth of GaAs x P 1 − x from the Liquid Phase , 1970 .