Schottky barriers calculations at the CoSi2/Si(111) and NiSi2/Si(111) interfaces
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[1] F. Cyrot-Lackmann,et al. Electronic structure of transition metal disilicides , 1990 .
[2] Asano,et al. Schottky barriers at NiSi2/Si(111) interfaces. , 1990, Physical review. B, Condensed matter.
[3] Christensen,et al. Electronic structure and Schottky-barrier heights of (111) NiSi2/Si A- and B-type interfaces. , 1989, Physical review letters.
[4] Rossi,et al. Evidence of eightfold coordination for Co atoms at the CoSi2/Si(111) interface. , 1989, Physical review letters.
[5] T. Ohshima,et al. Schottky barrier height of single‐crystal nickel disilicide/silicon interfaces , 1988 .
[6] E. Baerends,et al. The coordination of metal atoms at CoSi2/Si(111) and NiSi2/Si(111) Interfaces: Cluster calculations , 1988 .
[7] S. Asano,et al. LMTO-ASA Calculations on Si/NiSi2 Interfaces , 1988 .
[8] E. Baerends,et al. MSi_{2}/Si(111) (M=Co,Ni) interface chemical bond , 1988 .
[9] H. Dr. New silicide interface model from structural energy calculations. , 1988 .
[10] H. Känel,et al. Schottky barriers of epitaxial NiSi2 on Si(111) , 1988 .
[11] Xu Yong-nian,et al. Theoretical studies of metal disilicide-silicon interfaces. , 1986 .
[12] Tung,et al. Schottky-barrier heights of single-crystal NiSi2 on Si(111): The effect of a surface p-n junction. , 1986, Physical review. B, Condensed matter.
[13] P. Ho,et al. Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces , 1986 .
[14] T. C. Mcgill,et al. Schottky barrier height measurements of epitaxial NiSi2 on Si , 1985 .
[15] Ho,et al. Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111). , 1985, Physical review letters.
[16] I. Lindau,et al. Unified defect model and beyond , 1980 .
[17] S. L. Cunningham. Special points in the two-dimensional Brillouin zone , 1974 .
[18] King-Ning Tu,et al. Electronic structure and properties of Ni-Si(001) and Ni-Si(111) reactive interfaces , 1984 .