Process for handling of semiconductor layers for their thinning

The invention relates to a method of a thin film obtained from a plate comprising a front face having a given terrain and a rear face, comprising the steps of: a) providing a support handle having a face serving as a bonding face; b) preparing the front face of the plate, said preparation comprising an incomplete planarisation of the front face of the plate to obtain a bonding energy E 0 between a first value corresponding to the minimum bonding energy compatible with step subsequent thinning, and deuxierce value corresponding to the maximum bonding energy compatible with the subsequent separation operation, the bonding energy E 0 being such that E 0 = α.E, where E is the bonding energy that would be obtained if the front face of the plate was completely planarised, α is the ratio between the incompletely planarised surface of the front face of the plate and the surface of the front face of the plate if it were completely planarised c) interlock by molecular adhesion, the front face of the plate on the bonding face of the support handle; d) thinning the plate from its back face until the thin layer, and e) delay the thin layer on a support for use, involving separation from the support handle.