Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance

The composition and temperature dependence (20K<T<380K) of the direct gap, E0, of a series of GaAs1−xNx/GaAs (0≤x≤0.0232) samples has been measured using contactless electroreflectance. Our results for the composition dependence of E0 are different in relation to a recent experiment [W.G. Bi and C.W Tu, Appl. Phys. Lett. 70, 1608 (1997)]. In contrast to previously reported results, we find that the temperature dependence of the direct gap is in fact dependent on N composition and that the parameters which describe the temperature dependence of the band gap lie between those of GaAs and GaN.

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