Study of the electrical activation of Si + -implanted InGaAs by means of Raman scattering

Raman scattering has been used to study the lattice recovery and electrical activation of Si+-implanted In0.53Ga0.47 As achieved by rapid thermal annealing. The degree of crystallinity recovery of totally amorphized samples is studied for annealing temperatures between 300 and 875 °C. A good degree of recovery is achieved for an annealing temperature of 600 °C. Higher annealing temperatures are required to electrically activate the Si donors. The observed LO phonon-plasmon coupled modes allow us to monitor the electrical activation by means of Raman scattering. We find that electrical activation sets in for annealing temperatures around 700 °C, and gradually increases up to an annealing temperature of 875 °C. The optimal conditions for the rapid thermal annealing are found to be 875 °C for 10 s.

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