Resistive switching in TiN/HfO2/Ti/TiN MIM devices for future nonvolatile memory applications

Bipolar resistive switching in TiN/HfO<sub>2</sub>/Ti/TiN devices using a CMOS technology process is demonstrated. The performance metrics include a retention time >10<sup>5</sup> s and a cycling endurance in dc sweep mode >10<sup>2</sup>. By controlling either the set current I<sub>set</sub> or by setting an appropriate stop voltage V<sub>stop</sub>, the devices hold the potential for multilevel operation. The results suggest that HfO<sub>2</sub>-based MIM devices with Si CMOS compatible metal electrodes may be well suited for future embedded nonvolatile memory applications.

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