论文信息 - Examination of deuterium transport through device structures

Examination of deuterium transport through device structures

We use secondary ion mass spectrometry to characterize the hydrogen/deuterium distribution and concentration on 0.18 μm “metal” oxide silicon test structures subjected to deuterium anneals. We examine the temperature dependence and the influence of doping on the transport of deuterium to the gate oxide interfaces resulting in interface passivation. We find that undoped polycrystalline silicon appears to be an efficient barrier for deuterium transport at typical postmetallization sintering temperatures.

Robert M. Wallace | P. J. Chen

[1] Physical Chemistry of Hydrogenous Species in the Si-Si02 System , 1995 .

[2] Krishna C. Saraswat,et al. Electrical properties of heavily doped polycrystalline silicon-germanium films , 1994 .

[3] K. L. Brower. Passivation of paramagnetic Si‐SiO2 interface states with molecular hydrogen , 1988 .

[4] K. Hess,et al. Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability , 1997, IEEE Electron Device Letters.

[5] J. Abelson,et al. Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy , 1997 .

[6] J. Chevallier,et al. Hydrogen in Crystalline Semiconductors , 1988 .

[7] F. Priolo,et al. Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si , 1998 .

[8] V. Afanas’ev,et al. Reply to the comment on 'Creation of interface defects in thermal through annealing' , 1997 .

[9] K. Hess,et al. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing , 1996 .

[10] H. Mogul,et al. Electrical and physical characterization of deuterium sinter on submicron devices , 1998 .

[11] K. L. Brower,et al. Chemical kinetics of hydrogen and (111)Si-SiO2 interface defects , 1990 .

[12] S. Wolf,et al. Silicon Processing for the VLSI Era , 1986 .