论文信息 - High-pressure dependence of the room-temperature minority carrier lifetimes in GaAs - 字舞流文

High-pressure dependence of the room-temperature minority carrier lifetimes in GaAs

Photoluminescence decay measurements on n-GaAs under pressure indicate the appearance of a hole recombination centre at p approximately=2 GPa. This can be ascribed to DX centres with a hole capture cross section of 10-16 cm2.

J. Sallese | M. Leroux | P. Gibart | C. Vérié

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